Industrial Applications

Specific radio-isotopes are adopted for industrial applications such as gamma irradiation sources for quality control or gamma tracers for industrial process monitoring. In addition, NRG has a proven track record in the field of neutron transmutation doped (NTD) of silicon ingots.

NDT Iridium
The market for non-destructive testing (NDT: a way of determining the condition/integrity of objects such as welds in pipelines without having to damage them) demands sources with a high specific activity.

Industrial radiography with the help of an Ir-192 source is a non-destructive technique (NDT) for inspecting industrial components. The technique is mainly used in the inspection of welds in pressure vessels and pipelines. In everyday terms, an image of the weld  is taken using gamma radiation emitted by the Ir-192 source. It can thus be determined whether the weld  complies with the quality requirements imposed.
High flux reactors like the HFR are highly suitable for the efficient production of these sources.

NDT Ir-192 is by far the most commonly used NDT source and is based on the phenomenon of absorption of gamma radiation by materials. Due to the radiation’s effects on the material, an image is produced on film. This method is applied in investigations into the presence of internal imperfections in welds , welded connections, cast pieces, components of machines and various structures.

NTD Silicon
This stands for Neutron Transmutation Doped Silicon (NTD silicon) which is the worldwide highest standard in terms of stability of electrical resistivity (in ohm-cm) that can be achieved. NRG carries out irradiations for the semiconductor industry (for high-power modules) for  high stability demanding applications in the electrical grid, high-speed trains, green technology and hybrid & electric vehicles).

Through the activation of ultrapure single-crystal silicon ingots, the electrical resistance is reduced to the desired value in ohm-cm. This process is irreversible: stable Si-30 becomes radioactive Si-31 and decays with a half-life of 2.62 hours into stable P-31 (phosphorus). This P-31 is the ‘impurity’ in the silicon which causes the desired change in the electrical resistance.